Papers

전체 248
번호 제목 작성자 작성일 추천 조회
168
Improved resistive switching properties by nitrogen doping in tungsten oxide thin films (IF 2.03 ; JCR 51.935% )
유경종 | 2015.05.24 | 추천 0 | 조회 105
유경종 2015.05.24 0 105
167
Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices (IF 3.597 ; JCR 23.548% )
유경종 | 2015.05.24 | 추천 0 | 조회 91
유경종 2015.05.24 0 91
166
Effect of hydrogen post-annealing on transparent conductive ITO/Ga2O3 bi-layer films for deep ultraviolet light-emitting diodes (IF 1.134 ; JCR 77.119%)
유경종 | 2015.05.24 | 추천 0 | 조회 92
유경종 2015.05.24 0 92
165
Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes (IF 1.810 ; JCR 57.742% )
유경종 | 2015.05.24 | 추천 0 | 조회 93
유경종 2015.05.24 0 93
164
Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)
유경종 | 2015.05.24 | 추천 0 | 조회 92
유경종 2015.05.24 0 92
163
Charge-trap flash memory using zirconium-nitride-based memristor switches (IF 3.169 ; JCR 28.065%)
유경종 | 2015.05.24 | 추천 0 | 조회 108
유경종 2015.05.24 0 108
162
In vivo optical modulation of neural signals using monolithically integrated two-dimensional neural probe arrays (IF 3.998 ; JCR 23.239% )
유경종 | 2015.05.24 | 추천 0 | 조회 77
유경종 2015.05.24 0 77
161
Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes (IF 3.669 ; JCR 19.072% )
유경종 | 2015.05.24 | 추천 0 | 조회 73
유경종 2015.05.24 0 73
160
InGaN/AlGaInN-based ultraviolet light-emitting diodes with indium gallium tin oxide electrodes (IF 2.03 ; JCR 51.935% )
유경종 | 2015.05.24 | 추천 0 | 조회 65
유경종 2015.05.24 0 65
159
Deep‐ultraviolet AlGaN light‐emitting diodes with variable quantum well and barrier widths (IF 1.759 ; JCR 63.043% )
유경종 | 2014.05.24 | 추천 0 | 조회 84
유경종 2014.05.24 0 84
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