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Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications / ACS Applied Materials & Interfaces (IF 9.229 ; JCR 13.02%)
2022
작성자
thlee12
작성일
2022-02-11 16:03
조회
203
저널명 : ACS Applied Materials & Interfaces 14(8), 10546-10557 (2022 MAR)
논문 저자
Atul C. Khot,
Tukaram D. Dongale, Kiran A. Nirmal, Ji Hoon Sung, Ho Jin Lee, Revannath D. Nikam, and
Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Amorphous-Boron-Nitride-Memristive-Device-for-High-Density-Memory-and-Neuromorphic-Computing-Applications.pdf
«
Investigation of sidewall passivation mechanism of InGaN-based blue microscale light-emitting diodes / Applied Surface Science (IF 6.707 ; JCR 2.38%)
Effects of Switching Layer Morphology on Resistive Switching Behavior: A Case Study of Electrochemically Synthesized Mixed-Phase Copper Oxide Memristive Devices / Applied Materials Today (IF 10.041 ; JCR 11.53%)
»
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