닫기
Menu
close

Papers

Effects of Switching Layer Morphology on Resistive Switching Behavior: A Case Study of Electrochemically Synthesized Mixed-Phase Copper Oxide Memristive Devices / Applied Materials Today (IF 10.041 ; JCR 11.53%)

2022
작성자
thlee12
작성일
2022-03-21 15:02
조회
124
저널명 : Applied Materials Today XX(X), XXXX-XXXX (2022 MAR)


논문 저자
Somnath S. Kundale, Akhilesh P. Patil, Snehal L. Patil, Prashant B. Patil, Rajanish K. Kamat, Deok-kee Kim, Tae Geun Kim* and Tukaram D. Dongale*
« Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications / ACS Applied Materials & Interfaces (IF 9.229 ; JCR 13.02%)
Elastomeric indoor organic photovoltaics with superb photo-thermal endurance / Advanced Functional Materials (IF 18.808 ; JCR 4.69%) »
목록보기
Powered by KBoard
chevron-down