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Low power Ti-doped NbO2-based selector device with high selectivity and low OFF current / Journal of Alloys and Compounds (IF 4.650 ; JCR 9.49%)
2021
작성자
thlee12
작성일
2021-07-01 14:42
조회
652
저널명 :
Journal of Alloys and Compounds, 884
161041 (2021, DEC)
논문 저자
Dong Su Jeon, Tukaram D.Dongale, Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Low-power-Ti-doped-NbO2-based-selector-device-with-high-selectivity-and-low-OFF-current.pdf
«
Manipulation of blue TADF top-emission OLEDs by the first-order optical cavity design: toward a highly pure blue emission and balanced charge transport / Photonics Research (IF 6.099 ; JCR 9.79%)
Giant Thermoelectric Seebeck Coefficients in Tellurium Quantum Wires Formed Vertically in Aluminum Oxide Layer by Electrical Breakdown / Journal of Physical Chemistry Letters (IF:6.475 ; JCR:6.76%)
»
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