Thin film transmittance (TFT) technology based on amorphous oxide semiconductor (AOS) is recently applied in many transparent and flexible devices, and studies on the combinations and properties of materials are actively carried out to improve the electron mobility of TFT devices and the stability of active layer materials. In particular, oxide-based compound materials are recognized as the most promising material because they have high electron mobility and excellent uniformity of element characteristics compared to hydrogenated non-crystal silicon (a-Si:H) materials, and low production costs compared to low-temperature polycrystalline silicon materials. Thus, various research groups improve the electrical properties of AOS-based TFT devices by using various surface-processing techniques (ex. hydrogen processing, UV treatment processing) and various forms of active layer fabrication techniques using oxide-based compound materials.
In our study, a layer of reduced graphene oxide (RGO) is inserted inside an oxide-based compound material used as an active layer of TFT, inducing the Zn-C bond between ZnO and RGO material through annealing process, improving the electron mobility of the oxide semiconductor material itself, and finally improving the electro conductivity of TFT element.